Silicon Thermal Oxide Wafer: Must-Know Specifications | Alpha Nanotech

Thermal oxidation is the result of exposing Silicon thermal oxide wafer to a combination of oxidizing agents and heat to make a layer of silicon dioxide. This layer is most commonly made with hydrogen and oxygen gas, although any halogen gas can be utilized.

Silicon dioxide growth takes place on SiO2 thermal oxide wafers in ambient air to about 20 angstroms thick; however, for most specifications thermal oxide growth uses a heat source in order to catalyze this reaction and create oxide layers up to 25000 Angstorms.

There are numerous applications for thermal oxidation on silicon wafers, and both require growth of oxygen on the surface of the water. This differs from CVD applications, where the oxide layer is deposited on top of the wafer.

Silicon Thermal Oxide Wafer

Growth rate of silicon thermal oxide wafer

The preliminary growth of the oxide is limited by the rate at which the chemical retort takes place. After the first 100 to 300 Angstroms of oxide has been produced, the growth rate of oxide layer will be limited principally by the rate of diffusion of the oxidant through the oxide layers.

Specifications

·         The thickness range of Silicon thermal oxide wafers 500Angstroms

·         Thickness tolerance is targeted at +/-5 %

·         Within wafer uniformity is +/-3% or better

·         Wafer to wafer uniformity is +/-5% or better

·         Wafers size are 50mm, 100mm, 125mm, 150mm, 200mm

·         Wafer thickness is 100nm to 2000nm

·         Temperature ranges from 950 degree Celsius to 1050 degree Celsius

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Silicon Thermal Oxide Wafer is Used as the Dielectric Material!

Silicon is known as the second most available material in the universe. And this is now used in a great amount of make the semiconductors. These items are used for the making of different electronic devices that we use these days to make life simple and convenient. So, you can say that the electronic industry also depends greatly on the production of the silicon thermal oxide wafer. Silicon wafers are something that we have at least seen once in our lifetime. These materials are quite common. The computer you use or the mobile phone that you carry to communicate with others is also made while using the semiconductors. So, it’s the semiconductor technology that is followed now greatly depends on the silicon wafer. These are the thin layers are they are primarily used as the dielectric material. These wafers are also integrated for the MEMS or the micro electro mechanical systems. In order to produce the silicon thermal oxide wafer, the oxidation of the silicon with oxygen needs to be done.

silicon thermal oxide wafer

·         Thermal oxidation process is followed

The thermal oxidation process followed can expose the silicon wafer to the oxidizing agents as well as heat. Due to this process, a silicon dioxide layer is also formed. This type of layer comprises of oxygen and hydrogen. Sometime halogen gas is also used to make the SiO2 thermal oxide wafer.

·         Used as the dielectric material

During this oxidation process, heat source is also used to catalyze the reaction as well as to create the layers of oxide. The applications of these silicon wafers can be many. But mainly they are used as the dielectric material.

Silicon Thermal Oxide Wafer is Produced Through Thermal Oxidation!

In order to produce the fused silicon wafer thermal oxidation is the process that is considered on a high node. This is a process during which the silicon wafer is exposed to the combination of certain oxidizing agents as well as heat. This is how the layers of silicon dioxide are produced. Such layers are mostly made with oxygen, hydrogen and some amount of halogen gas. The growth of silicon dioxide uses to take place on the wafers that are present under ambient air that can have a thickness of around twenty angstroms. For the specific growth of silicon thermal oxide wafer, a heat source can be used so that the reaction can be catalyzed and the 25,000 angstroms of oxide layers can be achieved. These wafers can be used for a wide range of applications. However, they are primarily used for the dielectric material as well as for the MEMS devices or known as the microelectromechanical systems. 

Silicon thermal oxide wafer

• Know more about the oxidation process

In order to perform the thermal oxidation process for the silicon wafers, there are two methods followed. Well, for both these methods, the growth of the oxygen is always vital and this needs to be done on the surface of such a wafer. Well, this method differs from the CVD applications as per which the oxide layer uses to get deposited on the silicon wafer. SiO2 fused silica wafer is used for the electronic devices most of the time.

• Get it at an affordable price

When you are looking for the best silicon wafer, you should go for the prime grade one. The top supplier of silicon wafer offers such products at affordable prices now.