Silicon Thermal Oxide Wafer is Produced Through Thermal Oxidation!

In order to produce the fused silicon wafer thermal oxidation is the process that is considered on a high node. This is a process during which the silicon wafer is exposed to the combination of certain oxidizing agents as well as heat. This is how the layers of silicon dioxide are produced. Such layers are mostly made with oxygen, hydrogen and some amount of halogen gas. The growth of silicon dioxide uses to take place on the wafers that are present under ambient air that can have a thickness of around twenty angstroms. For the specific growth of silicon thermal oxide wafer, a heat source can be used so that the reaction can be catalyzed and the 25,000 angstroms of oxide layers can be achieved. These wafers can be used for a wide range of applications. However, they are primarily used for the dielectric material as well as for the MEMS devices or known as the microelectromechanical systems. 

Silicon thermal oxide wafer

• Know more about the oxidation process

In order to perform the thermal oxidation process for the silicon wafers, there are two methods followed. Well, for both these methods, the growth of the oxygen is always vital and this needs to be done on the surface of such a wafer. Well, this method differs from the CVD applications as per which the oxide layer uses to get deposited on the silicon wafer. SiO2 fused silica wafer is used for the electronic devices most of the time.

• Get it at an affordable price

When you are looking for the best silicon wafer, you should go for the prime grade one. The top supplier of silicon wafer offers such products at affordable prices now.