P-type Boron-doped 200nm SiO2 thermal oxide wafer

 P-type Boron-doped 200nm SiO2 thermal oxide wafer

P-type Boron-doped 200nm SiO2 thermal oxide wafer

We give warm oxide wafer in measurement from 2" to 12 " , we generally pick prime evaluation and imperfection free P-type Boron-doped 200nm SiO2 thermal oxide wafer as substrate for developing high consistency warm oxide layer to meet your particular necessities . Reach us for additional data on cost and conveyance time.